The performance volatility of carbon nanotube-based devices: Impact of ambient oxygen

The performance volatility of carbon nanotube-based devices: Impact of ambient oxygen

Journal Article

Abstract

​Understanding the performance volatility of carbon nanotube-based devices will expedite their applications. We performed in situ electrical and Raman scattering studies on an individual semiconducting single-walled carbon nanotube in the field-effect transistor geometry under different ambient and temperatures. The Raman G+ mode frequency responds in synchronization with changes in the charge density induced by an external gate voltage. Ambient caused a blueshift in the G+ mode and a reversible transformation of the device performance from n -type in vacuum to p -type in air, owing to the charge transfer-induced phonon renormalization by oxygen.​​​

Details

PUBLISHED IN
Applied Phys. Lett., v. 95 p. 123118
PUBLICATION DATE
25 set 2009
AUTHORS
G. Chen, T. Paronyan, E. Pigos, G. Sumanasekera, A. Harutyunyan