Observation of Rapid Exciton-Exciton Annihilation in Monolayer Molybdenum Disulfide

Observation of Rapid Exciton-Exciton Annihilation in Monolayer Molybdenum Disulfide

Journal Article

Abstract

​​​Monolayer MoS2 is a direct-gap two-dimensional semiconductor that exhibits strong electronhole interactions, leading to the formation of stable excitons and trions. Here we report the existence of efficient excitonexciton annihilation, a four-body interaction, in this material. Excitonexciton annihilation was identified experimentally in ultrafast transient absorption measurements through the emergence of a decay channel varying quadratically with exciton density. The rate of excitonexciton annihilation was determined to be (4.3 +/- 1.1) x 10 (2) cm(2)/s at room temperature.

Details

PUBLISHED IN
Nano Letters, 14 (10), pp 5625–5629
PUBLICATION DATE
29 elokuuta 2014
AUTHORS
D. Sun, Y. Rao, G. Reider, G. Chen, Y. You, L. Brezin, A. Harutyunyan, T. Heinz