Ultrasensitive gas sensors with atomically thin-layered transition metal dichalcogenides

Ultrasensitive gas sensors with atomically thin-layered transition metal dichalcogenides

Conference

Abstract

The advance of nanotechnology has opened new opportunities to develop ever more sensitive sensors. 2D transition metal dichalcogenides (TMDCs) offer a wide variety of possibilities for ultrasensitive and ultrafast sensor applications due to its high surface-to-volume ratio and exceptional transport properties, although it is challenging to achieve optimal sensitivity due to unintentional contaminations. Our previous work revealed a powerful surface cleaning method by applying continuous in situ UV light illumination during gas detection with single-walled carbon nanotubes (SWNT) [1] and graphene [2,3]. Here we report high performance gas sensors based on conductivity changes constructed as FET devices from thin-layered TMDCs synthesized by chemical vapor deposition. The effect of UV light as well as the mechanism of gas sensing with different TMDCs are discussed and compared with our previous works [1-3]. A better understanding of the sensing mechanism will be crucial for device design and to improve their sensitivity and performance.
[1] Chen, G.; Paronyan, T. M.; Pigos, E. M.; Harutyunyan, A. R., Scientific Reports 2012, 2, 343.
[2] Chen, G.; Paronyan, T. M.; Harutyunyan, A. R., Appl. Phys. Lett. 2012, 101, 053119.
[3] Lv, R.; Chen, G.; Li, Q.; et al, PNAS 2015, 112, 14527-14532.

Details

PUBLISHED IN
Materials Research Society (MRS) Fall meeting 2016, Boston, MA, USA
PUBLICATION DATE
02 dic 2016
AUTHORS
Gugang Chen, Avetik Harutyunyan, Nestor Perea-López, Mauricio Terrones