The performance volatility of carbon nanotube-based devices: Impact of ambient oxygen

The performance volatility of carbon nanotube-based devices: Impact of ambient oxygen

G. Chen T. Paronyan E. Pigos G. Sumanasekera A. Harutyunyan

Applied Phys. Lett., v. 95 p. 123118

​Understanding the performance volatility of carbon nanotube-based devices will expedite their applications. We performed in situ electrical and Raman scattering studies on an individual semiconducting single-walled carbon nanotube in the field-effect transistor geometry under different ambient and temperatures. The Raman G+ mode frequency responds in synchronization with changes in the charge density induced by an external gate voltage. Ambient caused a blueshift in the G+ mode and a reversible transformation of the device performance from n -type in vacuum to p -type in air, owing to the charge transfer-induced phonon renormalization by oxygen.​​​

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