Quantifying the Semiconducting Fraction in Single-Walled Carbon Nanotube Samples through Comparative Atomic Force and Photoluminescence Microscopies

Quantifying the Semiconducting Fraction in Single-Walled Carbon Nanotube Samples through Comparative Atomic Force and Photoluminescence Microscopies

Journal Article

Abstract

​A new method was used to measure the fraction of semiconducting nanotubes in various as-grown or processed single-walled carbon nanotube (SWCNT) samples. SWCNT number densities were compared in images from near-IR photoluminescence (semiconducting species) and AFM (all species) to compute the semiconducting fraction. The results show large variations among growth methods and effective sorting by density gradient ultracentrifugation. This counting-based method provides important information about SWCNT sample compositions that can guide controlled growth methods and help calibrate bulk characterization techniques.​​​

Details

PUBLISHED IN
Nano Letters, 9, 9, 3203–3208
PUBLICATION DATE
01 Jun 2009
AUTHORS
A. Naumov, O. Kuznetsov, A. Harutyunyan, A. Green, M.Hersam, D. Resasco, P. Nikolaev, R. Weisman